Alkylated lignin with graft copolymerization for enhancing toughness of PLA

Journal of Materials Science - A green modification method for effectively enhancing toughness of PLA was established. Herein, alkaline lignin (LG) was firstly alkylated with dodecane, and then...     

Substrate temperature-controlled precursor reaction mechanism of PEALD-deposited MoOx thin films

Journal of Materials Science - Molybdenum oxide (MoOx) films had been grown by using plasma-enhanced atomic layer deposition (PEALD) with Mo(CO)6 precursor and O2 plasma reactant in a substrate...     

High-temperature oxidation behavior of monolithic Zr3[Al(Si)]4C6 and its composite incorporating 30vol% ZrB2-SiC: Providing a basis for broadening the service temperature

To provide a basis for the high-temperature oxidation of ultra-high temperature ceramics (UHTCs), the oxidation behavior of Zr₃[Al(Si)]₄C₆ and a novel Zr₃[Al(Si)]₄C₆-ZrB₂-SiC composite at 1500 °C were investigated for the first time. From the calculation results, the oxidation kinetics of the two specimens follow the oxidation dynamic parabolic law. Zr₃[Al(Si)]₄C₆ exhibited a thinner oxide scale and lower oxidation rate than those of the composite under the same conditions. The oxide scale of Zr₃[Al(Si)]₄C₆ exhibited a two-layer structure, while that of the composite exhibited a three-layer structure. Owing to the volatilization of B₂O₃ and the active oxidation of SiC, a porous oxide layer formed in the oxide scale of the composite, resulting in the degradation of its oxidation performance. Furthermore, the cracks and defects in the oxide scale of the composite indicate that the reliability of the oxide scale was poor. The results support the service temperature of the obtained ceramics.     

Establishment of a color tolerance for yarn-dyed fabrics from different color-depth yarns

Yarn-dyed fabric is often woven from warp and weft yarns in the same color depth to ensure a uniform color appearance. The difference in color depth between warp and weft tends to result in the uneven color of the yarn-dyed fabric. This article aims to establish a color tolerance for yarn-dyed fabric that can be woven with a qualified color appearance but from the warp and weft yarns in different color depths. A total of 27 yarn-dyed fabric samples in three color series (red, yellow, and blue) were evaluated by using the yarn-dyed fabric from warp and weft yarns in the same color depth of 2% (on weight of fabric, owf) as the standard. Visual assessment and instrumental measurement of color were carried out to establish the color tolerance ellipse that was defined as CMC (Color Measurement Committee) color differences (2:1) of no more than 1.00. It was found that the color strengths (K/S) and color differences (ΔE_CMC(2:1)) of these fabric samples for each color series had linear relationships with the color depths of warp and weft yarns. The color tolerance ellipses indicated that, even though the warp and weft yarns had an apparent color difference, they could be woven in fabrics with relatively uniform color appearance and meet the requirements for yarn-dyed fabric. This work provided valuable insight into the production of qualified yarn-dyed fabrics from unqualified dyed yarns.     

Porous Co3O4 column as a high-performance Lithium anode material

Journal of Porous Materials - Co3O4 has been widely investigated as a promising candidate anode material for lithium-ion batteries. We report on the porous Co3O4 column synthesized via a simple...     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.